Fabrication of epitaxial CoSi2 nanowires
نویسندگان
چکیده
We have developed a method for fabricating epitaxial CoSi2 nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi2 layers grown on Si~100! and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi2 /Si heterostructure and leads to the separation of the CoSi2 layer in this region during a rapid thermal oxidation step. A subsequent etching step and a second oxidation generate highly homogenous silicide wires with dimensions down to 50 nm. © 2001 American Institute of Physics. @DOI: 10.1063/1.1390318#
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تاریخ انتشار 2001